a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982-1200 fax (818) 765-3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv ces i c = 100 ma 110 v bv ce0 i c = 200 ma 55 v bv ebo i e = 10 ma 4.0 v h fe v ce = 6.0 v i c = 1.4 a 19 --- 50 --- c ob v cb = 50 v f = 1.0 mhz 100 pf g p imd 3 h h c v ce = 50 v p o ut = 75 w (pep) 14 --- 37 --- -30 db dbc % npn silicon rf power transistor HF75-50F description: the asi HF75-50F is designed for features: p g = 14 db min. at 75 w/30 mhz imd 3 = 50 dbc max. at 75 w (pep) omnigold ? metalization system maximum ratings i c 3.25 a v cbo 110 v v ceo 55 v v ebo 4.0 v p diss 127 w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +150 o c q q jc 2.0 o c/w package style .380 4l flg order code: asi10610 minimum inches / mm .970 / 24.64 b c d e f g a maximum .385 / 9.78 .980 / 24.89 inches / mm h .160 / 4.06 .180 / 4.57 dim .220 / 5.59 .230 / 5.84 .105 / 2.67 .085 / 2.16 i j .240 / 6.10 .255 / 6.48 .785 / 19.94 f b g .125 ?.125 nom. full r d e c h .112 x 45 a i j .004 / 0.10 .006 / 0.15 .280 / 7.11 .720 / 18.29 .730 / 18.54 e b c e
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